Search results for "Gamma Ray Spectroscopy"
showing 10 items of 18 documents
Polarization phenomena in Al/p-CdTe/Pt X-ray detectors
2013
Over the last decades, CdTe detectors are widely used for the development of room temperature X-ray and gamma ray spectrometers. Typically, high resolution CdTe detectors are fabricated with blocking contacts (indium, aluminum) ensuring low leakage currents and high electric field for optimum charge collection. As well known, time instability under bias voltage (termed as polarization) is the major drawback of CdTe diode detectors. Polarization phenomena cause a progressive degradation of the spectroscopic performance with time, due to hole trapping and detrapping from deep acceptors levels. In this work, we studied the polarization phenomenon on new Al/p-CdTe/Pt detectors, manufactured by …
Electrical Characterization of CdTe pixel detectors with Al Schottky anode
2014
Abstract Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage ( I–V ) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe con…
Spectroscopic response of a CdZnTe multiple electrode detector
2007
Abstract The spectroscopic performances of a CdZnTe detector (crystal size: 5×5×0.9 mm 3 ) with five electrodes (cathode, anode and three steering electrodes) were studied. The anode layout, which consists of a circular electrode ( φ =80 μm) surrounded by two ring electrodes (gap=100 μm; radial width Δ r =100 μm) and by one electrode that extends to the edge of the crystal, is mostly sensitive to the electron carriers, overcoming the well known effect of the hole trapping in the measured spectra. We report on the spectroscopic response of the detector at different bias voltages of the electrodes and at various photon energies ( 109 Cd, 241 Am and 57 Co sources). The CdZnTe detector exhibits…
Time-dependent electric field in Al/CdTe/Pt detectors
2015
Abstract Al/CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopy, even though they suffer from bias-induced time instability (polarization). Polarization phenomena cause a progressive time-degradation of the spectroscopic performance of the detectors, due to hole trapping and detrapping from deep acceptor levels that directly control the electric field distribution. In this work we present experimental investigations on the electric field profile of planar Al/CdTe/Pt detectors by means of Pockels effect measurements. The time/temperature dependence of the electric field was investigated in a long time window (up to 10 h) and the correlation with the reverse c…
Characterization of Al-Schottky CdTe detectors
2011
In the last decades, great efforts are being devoted to the development of CdTe detectors for high resolution X-ray and gamma ray spectroscopy. Recently, new rectifying contacts based on aluminum (Al) are very appealing in the development of CdTe detectors with low leakage currents and anode pixellization. In this work, we report on preliminary results of electrical and spectroscopic investigations on Schottky CdTe diode detectors (4.1 × 4.1 × 0.75 and 4.1 × 4.1 × 2 mm3) with Au/Ti/Al/CdTe/Pt electrode configuration. The detectors are characterized by very low leakage currents even at room temperature (26 pA at 25 °C under a bias voltage of −100 V for the 2 mm thick detector). Polarization …
Experimental results from Al/p-CdTe/Pt X-ray detectors
2013
Recently, Al/CdTe/Pt detectors have been proposed for the development of high resolution X-ray spectrometers. Due to the low leakage currents, these detectors allow high electric fields and the pixellization of anodes with the possibility to realize single charge carrier sensing detectors. In this work, we report on the results of electrical and spectroscopic investigations on CdTe diode detectors with Al/CdTe/Pt electrode configuration (4.1×4.1×0.75 and 4.1×4.1×2 mm3). The detectors are characterized by very low leakage currents in the reverse bias operation: 0.3 nA at 25 °C and 2.4 pA at -25 °C under a bias voltage of -1000 V. The spectroscopic performance of the detectors at both low and…
Contributions to Phase Two of AGATA electronics
2020
En el campo de la física nuclear, la espectroscopia de rayos gamma de alta resolución es un método preciso para estudiar la estructura del núcleo, extrayendo la energía y la distribución angular de los fotones gamma emitidos en las transiciones entre estados nucleares. Para obtener núcleos en un estado excitado y por tanto emitan rayos gamma, hemos de hacer chocar la materia, produciendo reacciones nucleares (espectroscopia de haz) o recurrir a desintegraciones radiactivas (espectroscopia de desintegración). Los detectores de semiconductor de germanio de alta pureza (HPGe) han demostrado tener una buena respuesta interaccionando con rayos gamma. Al igual que otros detectores de basados en s…
Optimization of quasi-hemispherical CdZnTe detectors by means of first principles simulation
2023
AbstractIn this paper we present the development of quasi-hemispherical gamma-ray detectors based on CdZnTe. Among the possible single-polarity electrode configurations, such as coplanar, pixelated, or virtual Frisch-grid geometries, quasi-hemispherical detectors are the most cost-effective alternative with comparable raw energy resolution in the high and low energy range. The optimal configuration of the sensor in terms of dimension of the crystals and electrode specifications has been first determined by simulations, and successively validated with experimental measures. Spectra from different sources have been acquired to evaluate the detectors performances. Three types of detectors with…
Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications
2009
Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector…
Charge transport properties in CdZnTe detectors grown by the vertical Bridgman technique
2011
Presently, a great amount of effort is being devoted to the development of CdTe and CdZnTe (CZT) detectors for a large variety of applications such as medical, industrial, and space research. We present the spectroscopic properties of some CZT crystals grown by the standard vertical Bridgman method and by the boron oxide encapsulated vertical Bridgman method, which has been recently implemented at IMEM-CNR (Parma, Italy). In this technique, the crystal is grown in an open quartz crucible fully encapsulated by a thin layer of liquid boron oxide. This method prevents contact between the crystal and the crucible, thereby allowing larger single grains with a lower dislocation density to be obta…